Dimension Effect on Breakdown Voltage of Partial SOI LDMOS
نویسندگان
چکیده
منابع مشابه
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement
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15 صفحه اولNumerical Study of Partial-SOI LDMOSFET Power Devices
Smart power ICs, which monolithically integrate low-loss power devices and control circuitry, have attracted much attention in a wide variety of applications [1], [2]. Commonly used smart power devices are the LDMOS and LIGBT implemented in bulk silicon or SOI (Silicon on Insulator). One of the key issues in the realization of such ‘smart power’ technology is the isolation of power devices and ...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2017
ISSN: 2168-6734
DOI: 10.1109/jeds.2017.2690363